SSM6J213FE(TE85L,F
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SSM6J213FE(TE85L,F , Toshiba

Hersteller: Toshiba
Mfr.Part #: SSM6J213FE(TE85L,F
Paket: ES6-6
RoHS:
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PDF For SSM6J213FE(TE85L,F

Beschreibung:
MOSFET P-Ch U-MOS VI FET ID -2.6A -20V 290pF
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Toshiba
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 250 mOhms
Mounting Style SMD/SMT
Pd - Power Dissipation 500 mW (1/2 W)
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case ES6-6
Length 1.6 mm
Width 1.2 mm
Height 0.55 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series SSM6J213
Packaging Cut Tape or Reel
Brand Toshiba
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 8 V
Vgs Th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 4.7 nC
Technology Si
Id - Continuous Drain Current 2.6 A
Vds - Drain-Source Breakdown Voltage 20 V
Factory Pack Quantity 4000
Subcategory MOSFETs
Unit Weight 0.001270 oz
Tradename U-MOSVI
Querverweise
792951
1148
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