CGD Signs Distribution Deal with DigiKey for GaN-Based Power ICs

DigiKey has recently entered into a distribution agreement with Cambridge GaN Devices (CGD), a specialist in GaN-based power ICs. CGD has launched its H2 series ICeGaN gallium nitride HEMT family, which operates at 650V and can be easily driven using commercially-available industry gate drivers, thereby reducing design complexity.

Compared to silicon parts, the ICeGaN HEMTs offer significantly lower QG and QOSS values, resulting in reduced switching losses, improved efficiency, and smaller, lighter, and more cost-effective systems. Moreover, the H2 series ICeGaN HEMTs feature CGD's smart gate interface, which enhances reliability and ruggedness by eliminating common e-mode GaN weaknesses. These devices also boast better over-voltage robustness, higher noise-immune threshold, dV/dt suppression, and ESD protection.

Additionally, the H2 series ICeGaN HEMTs from CGD are expected to drive innovation in a wide range of applications such as renewable energy, electric vehicles, and data centers. The efficient and reliable devices will help to reduce carbon emissions by improving the performance and reducing the size of power electronic systems. With this strategic partnership with DigiKey, CGD is well-positioned to bring its cutting-edge GaN-based power electronics technology to customers worldwide, enabling them to achieve their design goals more easily and cost-effectively than ever before.