BC856AS-7
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BC856AS-7 , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: BC856AS-7
Paket: SOT-363-6
RoHS:
Datenblatt:

PDF For BC856AS-7

ECAD:
Beschreibung:
Bipolar Transistors - BJT 100mA 65V
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  • Menge Stückpreis
  • 10+ $0.03753
  • 100+ $0.03006
  • 300+ $0.02628
  • 3000+ $0.02349
  • 6000+ $0.02133
  • 9000+ $0.02016

In Stock: 8990

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$0.3753

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 0.1 A
Mounting Style SMD/SMT
Pd - Power Dissipation 200 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-363-6
Collector- Base Voltage VCBO 80 V
Collector- Emitter Voltage VCEO Max - 65 V
Collector-Emitter Saturation Voltage - 250 mV
Emitter- Base Voltage VEBO 5 V
Length 2.2 mm
Width 1.35 mm
Height 1 mm
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 100 MHz
Series BC856A
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Dual
DC Collector/Base Gain Hfe Min 125
DC Current Gain HFE Max 250
Transistor Polarity PNP
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000212 oz
Querverweise
779079
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=779079&N=
$
10 0.03753
100 0.03006
300 0.02628
3000 0.02349
6000 0.02133
9000 0.02016