BC857BS-13-F
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BC857BS-13-F , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: BC857BS-13-F
Paket: SOT-363-6
RoHS:
Datenblatt:

PDF For BC857BS-13-F

ECAD:
Beschreibung:
Bipolar Transistors - BJT NPN Small SIG -50V -45V VCEO 6.0V VEBO
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  • Menge Stückpreis
  • 10+ $0.04905
  • 100+ $0.03915
  • 300+ $0.03420
  • 1000+ $0.03042
  • 5000+ $0.02754
  • 10000+ $0.02601

In Stock: 12980

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$0.4905

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Mounting Style SMD/SMT
Pd - Power Dissipation 200 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-363-6
Collector- Base Voltage VCBO - 50 V
Collector- Emitter Voltage VCEO Max - 45 V
Collector-Emitter Saturation Voltage - 400 mV
Emitter- Base Voltage VEBO - 5 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 100 MHz
Series BC857B
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Dual
Continuous Collector Current - 100 mA
DC Collector/Base Gain Hfe Min 220
DC Current Gain HFE Max 475
Transistor Polarity PNP
Technology Si
Factory Pack Quantity 10000
Subcategory Transistors
Unit Weight 0.000265 oz
Querverweise
750073
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=750073&N=
$
10 0.04905
100 0.03915
300 0.03420
1000 0.03042
5000 0.02754
10000 0.02601