BCP5616QTC
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BCP5616QTC , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: BCP5616QTC
Paket: SOT-223-3
RoHS:
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PDF For BCP5616QTC

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Beschreibung:
Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
Angebotsanfrage In Stock: 827699
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 2 A
Mounting Style SMD/SMT
Pd - Power Dissipation 2 W
Product Type BJTs - Bipolar Transistors
Package / Case SOT-223-3
Collector- Base Voltage VCBO 100 V
Collector- Emitter Voltage VCEO Max 80 V
Collector-Emitter Saturation Voltage 0.5 V
Emitter- Base Voltage VEBO 5 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 150 MHz
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Continuous Collector Current 1 A
DC Collector/Base Gain Hfe Min 25 at 5 mA, 2 V
DC Current Gain HFE Max 250 at 150 mA, 2 V
Transistor Polarity PNP
Technology Si
Factory Pack Quantity 4000
Subcategory Transistors
Unit Weight 0.003951 oz
Querverweise
712657
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=712657&N=
$
60 0.12762
200 0.08809
2000 0.07992
4000 0.08819