MN26D0UT-7
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MN26D0UT-7 , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: DMN26D0UT-7
Paket: SOT-523-3
RoHS:
Datenblatt:

PDF For DMN26D0UT-7

ECAD:
Beschreibung:
MOSFET N-Ch -20V VDSS 230mA 300mW
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  • Menge Stückpreis
  • 10+ $0.04230
  • 100+ $0.03501
  • 300+ $0.03132
  • 3000+ $0.02862
  • 6000+ $0.02646
  • 9000+ $0.02538

In Stock: 90

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Total

$0.423

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category MOSFET
RoHS
Product MOSFET Small Signal
Forward Transconductance - Min 242 mS
Rds On - Drain-Source Resistance 3 Ohms
Rise Time 7.9 ns
Fall Time 15.2 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 300 mW
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case SOT-523-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series DMN26
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 4.5 V
Vgs Th - Gate-Source Threshold Voltage 500 mV
Technology Si
Id - Continuous Drain Current 230 mA
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 13.4 ns
Typical Turn-On Delay Time 3.8 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.000071 oz
Querverweise
726704
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=726704&N=
$
10 0.04230
100 0.03501
300 0.03132
3000 0.02862
6000 0.02646
9000 0.02538