MMBT5401Q-7-F
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MMBT5401Q-7-F , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: MMBT5401Q-7-F
Paket: SOT-23-3
RoHS:
Datenblatt:

PDF For MMBT5401Q-7-F

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Beschreibung:
Bipolar Transistors - BJT SS Hi Voltage Trans
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Mounting Style SMD/SMT
Pd - Power Dissipation 310 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO - 160 V
Collector- Emitter Voltage VCEO Max - 150 V
Collector-Emitter Saturation Voltage - 200 mV
Emitter- Base Voltage VEBO - 5 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 300 MHz
Series MMBT5401
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Continuous Collector Current - 600 mA
DC Collector/Base Gain Hfe Min 60 at - 10 mA, - 5 V
DC Current Gain HFE Max 240 at - 10 mA, - 5 V
Transistor Polarity PNP
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000282 oz
Querverweise
775295
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=775295&N=
$
1 0.02686