MMBTA56Q-7-F
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MMBTA56Q-7-F , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: MMBTA56Q-7-F
Paket: SOT-23-3
RoHS:
Datenblatt:

PDF For MMBTA56Q-7-F

ECAD:
Beschreibung:
Bipolar Transistors - BJT PNP SS Trans 80Vceo 0.5A 0.3W
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 100+ $0.06826
  • 200+ $0.04420
  • 1500+ $0.03837

In Stock: 1875

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Total

$6.826

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current - 500 mA
Mounting Style SMD/SMT
Pd - Power Dissipation 310 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO - 80 V
Collector- Emitter Voltage VCEO Max - 80 V
Collector-Emitter Saturation Voltage - 250 mV
Emitter- Base Voltage VEBO - 4 V
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Qualification AEC-Q101
Gain Bandwidth Product FT 50 MHz
Series MMBTA56
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
Transistor Polarity PNP
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000282 oz
Querverweise
774056
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=774056&N=
$
100 0.06826
200 0.04420
1500 0.03837