ZXTN25100DFHTA
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ZXTN25100DFHTA , Diodes Incorporated

Hersteller: Diodes Incorporated
Mfr.Part #: ZXTN25100DFHTA
Paket: SOT-23-3
RoHS:
Datenblatt:

PDF For ZXTN25100DFHTA

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Beschreibung:
Bipolar Transistors - BJT NPN 100V HIGH GAIN
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  • Menge Stückpreis
  • 30+ $0.27072
  • 100+ $0.21688
  • 750+ $0.19451
  • 1500+ $0.18253
  • 3000+ $0.17352

In Stock: 9373

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$8.1216

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Diodes Incorporated
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 2.5 A
Mounting Style SMD/SMT
Pd - Power Dissipation 1810 mW
Product Type BJTs - Bipolar Transistors
Package / Case SOT-23-3
Collector- Base Voltage VCBO 180 V
Collector- Emitter Voltage VCEO Max 100 V
Emitter- Base Voltage VEBO 7 V
Length 3.05 mm
Width 1.4 mm
Height 1 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Gain Bandwidth Product FT 175 MHz
Series ZXTN25100
Packaging Cut Tape or Reel
Brand Diodes Incorporated
Configuration Single
DC Collector/Base Gain Hfe Min 120
DC Current Gain HFE Max 300 at 10 mA, 2 V
Transistor Polarity NPN
Factory Pack Quantity 3000
Subcategory Transistors
Unit Weight 0.000282 oz
Querverweise
728084
1155
/category/Semiconductors/Discrete-Semiconductors/Transistors/Bipolar-Transistors-BJT_1155?proid=728084&N=
$
30 0.27072
100 0.21688
750 0.19451
1500 0.18253
3000 0.17352