G66
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G66 , GOFORD

Hersteller: GOFORD
Mfr.Part #: G66
Paket: DFN 2x2-6L
RoHS:
Datenblatt:

PDF For G66

ECAD:
Beschreibung:
MOSFET P Trench 16V 5.8A 1V @ 250uA 45 mΩ @ 4.1A,4.5V DFN 2x2-6L RoHS
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 10+ $0.04446
  • 100+ $0.03609
  • 300+ $0.03186
  • 3000+ $0.02736
  • 6000+ $0.02484
  • 9000+ $0.02358

In Stock: 2390

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Menge Minimum 10
KAUFEN
Total

$0.4446

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer GOFORD
Continuous Drain Current (Id) @ 25°C 5.8A
Power Dissipation-Max (Ta=25°C) 1.7W
Rds On - Drain-Source Resistance 45mΩ @ 4.1A,4.5V
Package / Case DFN 2x2-6L
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 1V @ 250uA
Vds - Drain-Source Breakdown Voltage 16V
Querverweise
4644320
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4644320&N=
$
10 0.04446
100 0.03609
300 0.03186
3000 0.02736
6000 0.02484
9000 0.02358