BK55N300
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IXBK55N300 , IXYS

Hersteller: IXYS
Mfr.Part #: IXBK55N300
Paket: TO-264-3
RoHS:
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PDF For IXBK55N300

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Beschreibung:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Angebotsanfrage In Stock: 57
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer IXYS
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 25 V
Mounting Style Through Hole
Pd - Power Dissipation 625 W
Product Type IGBT Transistors
Package / Case TO-264-3
Collector- Emitter Voltage VCEO Max 3 kV
Collector-Emitter Saturation Voltage 2.7 V
Length 20.29 mm
Width 5.31 mm
Height 26.59 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series Very High Voltage
Packaging Tube
Brand IXYS
Configuration Single
Continuous Collector Current At 25 C 130 A
Continuous Collector Current Ic Max 130 A
Gate-Emitter Leakage Current +/- 200 nA
Technology Si
Factory Pack Quantity 25
Subcategory IGBTs
Unit Weight 0.264555 oz
Tradename BIMOSFET
Querverweise
742878
1156
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