TP80N10T
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IXTP80N10T , IXYS

Hersteller: IXYS
Mfr.Part #: IXTP80N10T
Paket: TO-220-3
RoHS:
Datenblatt:

PDF For IXTP80N10T

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Beschreibung:
MOSFET 80 Amps 100V 13.0 Rds
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer IXYS
Product Category MOSFET
RoHS
Rds On - Drain-Source Resistance 14 mOhms
Rise Time 54 ns
Fall Time 48 ns
Mounting Style Through Hole
Pd - Power Dissipation 230 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-220-3
Length 10.66 mm
Width 4.83 mm
Height 9.15 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Channel Mode Enhancement
Series IXTP80N10
Packaging Tube
Brand IXYS
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Technology Si
Id - Continuous Drain Current 80 A
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 31 ns
Factory Pack Quantity 50
Subcategory MOSFETs
Unit Weight 0.081130 oz
Tradename HiPerFET
Querverweise
758661
1148
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