GW50N60
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GW50N60 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IGW50N60T
Paket: TO-247-3
RoHS:
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PDF For IGW50N60T

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Beschreibung:
IGBT Transistors LOW LOSS IGBT TECH 600V 50A
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Infineon
Product Category IGBT Transistors
RoHS
Maximum Gate Emitter Voltage 20 V
Mounting Style Through Hole
Pd - Power Dissipation 333 W
Product Type IGBT Transistors
Package / Case TO-247-3
Collector- Emitter Voltage VCEO Max 600 V
Collector-Emitter Saturation Voltage 1.5 V
Length 15.9 mm
Width 5.3 mm
Height 20.95 mm
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 175 C
Series TRENCHSTOP IGBT
Packaging Tube
Part # Aliases IGW50N60TFKSA1 IGW5N6TXK SP000054926
Brand Infineon Technologies
Configuration Single
Continuous Collector Current At 25 C 90 A
Gate-Emitter Leakage Current 100 nA
Technology Si
Factory Pack Quantity 240
Subcategory IGBTs
Unit Weight 1.340411 oz
Tradename TRENCHSTOP
Querverweise
759895
1156
/category/Semiconductors/Discrete-Semiconductors/Transistors/IGBT-Transistors_1156?proid=759895&N=
$
1 5.52852