PB65R380C6ATMA1
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IPB65R380C6ATMA1 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IPB65R380C6ATMA1
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PDF For IPB65R380C6ATMA1

Beschreibung:
MOSFET N-CH 650V 10.6A D2PAK
Angebotsanfrage In Stock: 165474
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Drain To Source Voltage (Vdss) 650 V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V
Power Dissipation (Max) 83W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Querverweise
11951656
415
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