PB65R600C6ATMA1
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PB65R600C6ATMA1 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IPB65R600C6ATMA1
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PDF For IPB65R600C6ATMA1

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IPB65R600 - 650V AND 700V COOLMO
Angebotsanfrage In Stock: 93904
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Rds On (Max) @ Id, Vgs 600mOhm @ 2.1A, 10V
Vgs(Th) (Max) @ Id 3.5V @ 210µA
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 100 V
Supplier Device Package PG-TO263-3
Technology MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss) 650 V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fet Type N-Channel
Vgs (Max) ±20V
Fet Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V
Querverweise
11942685
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11942685&N=
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