PB95R310PFD7ATMA1
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IPB95R310PFD7ATMA1 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IPB95R310PFD7ATMA1
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc)
Rds On (Max) @ Id, Vgs 310mOhm @ 10.4A, 10V
Vgs(Th) (Max) @ Id 3.5V @ 520µA
Input Capacitance (Ciss) (Max) @ Vds 1765 pF @ 400 V
Supplier Device Package PG-TO263-3-2
Technology MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss) 950 V
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Fet Type N-Channel
Vgs (Max) ±30V
Fet Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On) 10V
Querverweise
11940917
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11940917&N=
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