PD079N06L3GATMA1
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IPD079N06L3GATMA1 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: IPD079N06L3GATMA1
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PDF For IPD079N06L3GATMA1

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MOSFET N-CH 60V 50A TO252-3
Angebotsanfrage In Stock: 280737
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 50A, 10V
Vgs (Max) ±20V
Operating Temperature -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 30 V
Fet Feature -
Power Dissipation (Max) 79W (Tc)
Supplier Device Package PG-TO252-3-311
Fet Type N-Channel
Drain To Source Voltage (Vdss) 60 V
Vgs(Th) (Max) @ Id 2.2V @ 34µA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Querverweise
11929462
415
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