SPP02N80C3
Payment:
Delivery:

SPP02N80C3 , Infineon Technologies

Hersteller: Infineon Technologies
Mfr.Part #: SPP02N80C3
Paket:
RoHS:
Datenblatt:

PDF For SPP02N80C3

ECAD:
Beschreibung:
N-CHANNEL POWER MOSFET
Angebotsanfrage In Stock: 663506
Warme Tipps: Bitte füllen Sie das folgende Formular aus und wir werden uns so schnell wie möglich mit Ihnen in Verbindung setzen.
*Menge:
*Ihr Name:
*E-mail Address:
Telefon:
Zielpreis:
Bemerkung:
Anfrage absenden
  • Product Details
  • Shopping Guide
  • FAQs
Technische Produktspezifikationen
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 800 V
Vgs(Th) (Max) @ Id 3.9V @ 120µA
Mounting Type Through Hole
Fet Type N-Channel
Vgs (Max) ±20V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Fet Feature -
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 100 V
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Querverweise
11937368
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11937368&N=
$