2N3507
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2N3507 , Microchip / Microsemi

Hersteller: Microchip / Microsemi
Mfr.Part #: 2N3507
Paket: TO-39-3
RoHS:
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Beschreibung:
Bipolar Transistors - BJT Power BJT
Angebotsanfrage In Stock: 94
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Microchip
Product Category Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current 3 A
Mounting Style Through Hole
Pd - Power Dissipation 1 W
Product Type BJTs - Bipolar Transistors
Package / Case TO-39-3
Collector- Base Voltage VCBO 80 V
Collector- Emitter Voltage VCEO Max 50 V
Collector-Emitter Saturation Voltage 500 mV
Emitter- Base Voltage VEBO 5 V
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Packaging Bulk
Brand Microchip / Microsemi
Configuration Single
DC Collector/Base Gain Hfe Min 35 at 500 mA, 1 V
DC Current Gain HFE Max 175 at 500 mA, 1 V
Transistor Polarity NPN
Technology Si
Factory Pack Quantity 1
Subcategory Transistors
Querverweise
800348
1155
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