N0106N3-G-P003
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N0106N3-G-P003 , Microchip Technology

Hersteller: Microchip Technology
Mfr.Part #: TN0106N3-G-P003
Paket: TO-92-3
RoHS:
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PDF For TN0106N3-G-P003

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Beschreibung:
MOSFET N-Channel DMOS FET Low Threshold 2.0V
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Microchip
Product Category MOSFET
RoHS
Product MOSFET Small Signal
Rds On - Drain-Source Resistance 4.5 Ohms
Rise Time 3 ns
Fall Time 3 ns
Mounting Style Through Hole
Pd - Power Dissipation 1 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-92-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Microchip Technology
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 2 V
Technology Si
Id - Continuous Drain Current 350 mA
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-Off Delay Time 6 ns
Typical Turn-On Delay Time 2 ns
Factory Pack Quantity 2000
Subcategory MOSFETs
Unit Weight 0.016000 oz
Querverweise
754891
1148
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