Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Nexperia |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 4.1 Ohms |
| Rise Time | 30 ns |
| Fall Time | 38 ns |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 420 mW |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Packaging | Cut Tape or Reel |
| Brand | Nexperia |
| Configuration | Single |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel Trench MOSFET |
| Vgs - Gate-Source Voltage | 4.5 V |
| Vgs Th - Gate-Source Threshold Voltage | 600 mV |
| Qg - Gate Charge | 0.55 nC |
| Technology | Si |
| Id - Continuous Drain Current | 230 mA |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Typical Turn-Off Delay Time | 65 ns |
| Typical Turn-On Delay Time | 19 ns |
| Factory Pack Quantity | 3000 |
| Subcategory | MOSFETs |
