Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | MOSFET |
| RoHS |
|
| Rds On - Drain-Source Resistance | 56 mOhms |
| Rise Time | 575 ns |
| Fall Time | 200 ns |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 500 W |
| Product Type | MOSFET |
| Number Of Channels | 1 Channel |
| Package / Case | TO-3PN-3 |
| Length | 16.2 mm |
| Width | 5 mm |
| Height | 20.1 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Channel Mode | Enhancement |
| Series | FDA59N30 |
| Packaging | Tube |
| Part # Aliases | FDA59N30_NL |
| Brand | ON Semiconductor / Fairchild |
| Configuration | Single |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vgs - Gate-Source Voltage | 30 V |
| Technology | Si |
| Id - Continuous Drain Current | 59 A |
| Vds - Drain-Source Breakdown Voltage | 300 V |
| Typical Turn-Off Delay Time | 120 ns |
| Typical Turn-On Delay Time | 140 ns |
| Factory Pack Quantity | 450 |
| Subcategory | MOSFETs |
| Unit Weight | 0.225789 oz |
