BC847BDW1T3G ON Semiconductor

BC847BDW1T3G , ON Semiconductor

Hersteller:	ON Semiconductor
Mfr.Part #:	BC847BDW1T3G
Paket:	SC-70-6
RoHS:
Datenblatt:	PDF For BC847BDW1T3G
ECAD:
Beschreibung:	Bipolar Transistors - BJT 100mA 50V Dual NPN

Angebotsanfrage In Stock: 855321

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Technische Produktspezifikationen

Product Attribute	Attribute Value
Manufacturer	ON Semiconductor
Product Category	Bipolar Transistors - BJT
RoHS
Maximum DC Collector Current	0.1 A
Mounting Style	SMD/SMT
Pd - Power Dissipation	380 mW
Product Type	BJTs - Bipolar Transistors
Package / Case	SC-70-6
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	45 V
Collector-Emitter Saturation Voltage	0.6 V
Emitter- Base Voltage VEBO	6 V
Length	2 mm
Width	1.25 mm
Height	0.9 mm
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Gain Bandwidth Product FT	100 MHz
Series	BC847BDW1
Packaging	Cut Tape or Reel
Brand	ON Semiconductor
Configuration	Dual
Continuous Collector Current	0.1 A
DC Collector/Base Gain Hfe Min	200
Transistor Polarity	NPN
Factory Pack Quantity	10000
Subcategory	Transistors
Unit Weight	0.000988 oz

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BC847BDW1T3G , ON Semiconductor