Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased |
| RoHS |
|
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 187 mW |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased |
| Package / Case | SOT-363-6 |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Length | 2 mm |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Series | MUN5212DW1 |
| Packaging | Cut Tape or Reel |
| Brand | ON Semiconductor |
| Configuration | Dual |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain Hfe Min | 60 |
| DC Current Gain HFE Max | 60 at 5 mA at 10 V |
| Peak DC Collector Current | 100 mA |
| Transistor Polarity | NPN |
| Typical Input Resistor | 22 kOhms |
| Typical Resistor Ratio | 1 |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
| Unit Weight | 0.000423 oz |
