THD4P02FT1G
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THD4P02FT1G , ON Semiconductor

Hersteller: ON Semiconductor
Mfr.Part #: NTHD4P02FT1G
Paket: ChipFET-8
RoHS:
Datenblatt:

PDF For NTHD4P02FT1G

ECAD:
Beschreibung:
MOSFET -20V -3A P-Channel w/3A Schottky
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  • Menge Stückpreis
  • 1+ $0.08034
  • 25+ $0.07188
  • 50+ $0.06906
  • 100+ $0.06483
  • 250+ $0.06201
  • 500+ $0.05919
  • 1000+ $0.05638

In Stock: 780

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer ON Semiconductor
Product Category MOSFET
RoHS
Type MOSFET
Product MOSFET Small Signal
Forward Transconductance - Min 5 S
Rds On - Drain-Source Resistance 200 mOhms
Rise Time 13 ns
Fall Time 13 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 1.1 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case ChipFET-8
Length 3.05 mm
Width 1.65 mm
Height 1.05 mm
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series NTHD4P02
Packaging Cut Tape or Reel
Brand ON Semiconductor
Configuration Single
Transistor Polarity P-Channel
Transistor Type 1 P-Channel
Vgs - Gate-Source Voltage 12 V
Technology Si
Id - Continuous Drain Current 3 A
Vds - Drain-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 7 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Unit Weight 0.002998 oz
Querverweise
752274
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=752274&N=
$
1 0.08034
25 0.07188
50 0.06906
100 0.06483
250 0.06201
500 0.05919
1000 0.05638