Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | Osram Opto Semiconductor |
| Product Category | Phototransistors |
| RoHS |
|
| Type | Chip |
| Product | Phototransistors |
| Rise Time | 9 us |
| Maximum On-State Collector Current | 100 mA |
| Fall Time | 9 us |
| Mounting Style | Through Hole |
| Pd - Power Dissipation | 200 mW |
| Product Type | Phototransistors |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 160 mV |
| Wavelength | 830 nm |
| Length | 5.6 mm |
| Width | 5.6 mm |
| Height | 6.2 mm |
| Minimum Operating Temperature | - 40 C |
| Maximum Operating Temperature | + 125 C |
| Qualification | AEC-Q101 |
| Package/Case | TO-18 |
| Part # Aliases | Q60215Y1113 |
| Brand | OSRAM Opto Semiconductors |
| Light Current | 2500 uA |
| Peak Wavelength | 830 nm |
| Dark Current | 50 nA |
| Half Intensity Angle Degrees | 8 deg |
| Factory Pack Quantity | 1000 |
| Subcategory | Optical Detectors and Sensors |
| Unit Weight | 400 mg |
