Technische Produktspezifikationen
| Product Attribute | Attribute Value |
|---|---|
| Manufacturer | ROHM Semiconductor |
| Product Category | Bipolar Transistors - BJT |
| RoHS |
|
| Maximum DC Collector Current | - 3 A |
| Mounting Style | SMD/SMT |
| Pd - Power Dissipation | 1 W |
| Product Type | BJTs - Bipolar Transistors |
| Package / Case | DFN2020-3 |
| Collector- Base Voltage VCBO | - 30 V |
| Collector- Emitter Voltage VCEO Max | - 30 V |
| Collector-Emitter Saturation Voltage | - 90 mV |
| Emitter- Base Voltage VEBO | - 6 V |
| Minimum Operating Temperature | - |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product FT | 240 MHz |
| Packaging | Cut Tape or Reel |
| Part # Aliases | 2SAR542F3 |
| Brand | ROHM Semiconductor |
| Configuration | Single |
| Continuous Collector Current | - 3 A |
| DC Collector/Base Gain Hfe Min | 200 |
| DC Current Gain HFE Max | 500 |
| Transistor Polarity | PNP |
| Technology | Si |
| Factory Pack Quantity | 3000 |
| Subcategory | Transistors |
