NP82N04PDG-E1-AY
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NP82N04PDG-E1-AY , Renesas Electronics Corporation

Hersteller: Renesas Electronics Corporation
Mfr.Part #: NP82N04PDG-E1-AY
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MOSFET N-CH 40V 82A TO263
Angebotsanfrage In Stock: 344879
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Surface Mount
Supplier Device Package TO-263
Drain To Source Voltage (Vdss) 40 V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V
Power Dissipation (Max) 1.8W (Ta), 143W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Fet Feature -
Vgs(Th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Operating Temperature 175°C (TJ)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Querverweise
11951119
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11951119&N=
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