GWA40H120DF2 STMicroelectronics

GWA40H120DF2 , STMicroelectronics

Hersteller:	STMicroelectronics
Mfr.Part #:	STGWA40H120DF2
Paket:	TO-247-3
RoHS:
Datenblatt:	PDF For STGWA40H120DF2
ECAD:
Beschreibung:	IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Angebotsanfrage In Stock: 542

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Technische Produktspezifikationen

Product Attribute	Attribute Value
Manufacturer	STMicroelectronics
Product Category	IGBT Transistors
RoHS
Maximum Gate Emitter Voltage	20 V
Operating Temperature Range	- 55 C to + 175 C
Mounting Style	Through Hole
Pd - Power Dissipation	468 W
Product Type	IGBT Transistors
Package / Case	TO-247-3
Collector- Emitter Voltage VCEO Max	1.2 kV
Collector-Emitter Saturation Voltage	2.5 V
Length	20.15 mm
Width	15.75 mm
Height	5.15 mm
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Series	STGWA40H120DF2
Brand	STMicroelectronics
Configuration	Single
Continuous Collector Current	40 A
Continuous Collector Current At 25 C	80 A
Continuous Collector Current Ic Max	80 A
Gate-Emitter Leakage Current	250 nA
Technology	Si
Factory Pack Quantity	600
Subcategory	IGBTs
Unit Weight	1.340411 oz

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GWA40H120DF2 , STMicroelectronics