SI2307CDS-T1-GE3
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SI2307CDS-T1-GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: SI2307CDS-T1-GE3
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PDF For SI2307CDS-T1-GE3

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Beschreibung:
MOSFET P Channel 30V 3.5A 3V @ 250uA 88mΩ @ 3.5A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 5+ $0.10503
  • 50+ $0.08532
  • 150+ $0.07551
  • 500+ $0.06813
  • 3000+ $0.05580
  • 6000+ $0.05292

In Stock: 3675

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Menge Minimum 5
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Total

$0.52515

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Technische Produktspezifikationen
Product Attribute Attribute Value
Continuous Drain Current (Id) @ 25°C 3.5A
Power Dissipation-Max (Ta=25°C) 1.1W
Rds On - Drain-Source Resistance 88mΩ @ 3.5A,10V
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Querverweise
4971922
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4971922&N=
$
5 0.10503
50 0.08532
150 0.07551
500 0.06813
3000 0.05580
6000 0.05292