SI2369DS-T1-GE3
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SI2369DS-T1-GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: SI2369DS-T1-GE3
Paket: SOT-23(SOT-23-3)
RoHS:
Datenblatt:

PDF For SI2369DS-T1-GE3

ECAD:
Beschreibung:
MOSFET P Trench 30V 7.6A 2.5V @ 250uA 29 mΩ @ 5.4A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 10+ $0.16424
  • 50+ $0.15152
  • 200+ $0.14092
  • 600+ $0.13033
  • 1500+ $0.12185
  • 3000+ $0.11655

In Stock: 1467

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Total

$1.6424

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 7.6A
Power Dissipation-Max (Ta=25°C) 1.25W
Rds On - Drain-Source Resistance 29mΩ @ 5.4A,10V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 2.5V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Querverweise
4614445
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4614445&N=
$
10 0.16424
50 0.15152
200 0.14092
600 0.13033
1500 0.12185
3000 0.11655