SI4435DDY-T1-GE3
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SI4435DDY-T1-GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: SI4435DDY-T1-GE3
Paket: SOIC-8_150mil
RoHS:
Datenblatt:

PDF For SI4435DDY-T1-GE3

ECAD:
Beschreibung:
MOSFET P Trench 30V 11.4A 3V @ 250uA 24 mΩ @ 9.1A,10V SOIC-8_150mil RoHS
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 5+ $0.18765
  • 50+ $0.15183
  • 150+ $0.13644
  • 500+ $0.11727
  • 2500+ $0.09747
  • 5000+ $0.09234

In Stock: 1980

Ship Immediately
Menge Minimum 5
KAUFEN
Total

$0.93825

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 11.4A
Power Dissipation-Max (Ta=25°C) 2.5W
Rds On - Drain-Source Resistance 24mΩ @ 9.1A,10V
Package / Case SOIC-8_150mil
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 30V
Querverweise
4581792
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581792&N=
$
5 0.18765
50 0.15183
150 0.13644
500 0.11727
2500 0.09747
5000 0.09234