SQ2310ES-T1_GE3
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SQ2310ES-T1_GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: SQ2310ES-T1_GE3
Paket: SOT-23(SOT-23-3)
RoHS:
Datenblatt:

PDF For SQ2310ES-T1_GE3

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Beschreibung:
MOSFET N Trench 20V 6A(Tc) 1V @ 250uA 30 mΩ @ 5A,4.5V SOT-23(SOT-23-3) RoHS
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  • Menge Stückpreis
  • 1+ $0.45698
  • 10+ $0.41922
  • 30+ $0.41166
  • 100+ $0.38900

In Stock: 349

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$0.45698

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 6A(Tc)
Power Dissipation-Max (Ta=25°C) 2W(Tc)
Rds On - Drain-Source Resistance 30mΩ @ 5A,4.5V
Package / Case SOT-23(SOT-23-3)
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 1V @ 250uA
Vds - Drain-Source Breakdown Voltage 20V
Querverweise
4615866
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4615866&N=
$
1 0.45698
10 0.41922
30 0.41166
100 0.38900