Si2308BDS-T1-GE3
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Si2308BDS-T1-GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: Si2308BDS-T1-GE3
Paket: SOT-23-3
RoHS:
Datenblatt:

PDF For Si2308BDS-T1-GE3

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Beschreibung:
MOSFET N Trench 60V 2.3A 3V @ 250uA 156 mΩ @ 1.9A,10V SOT-23-3 RoHS
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  • Menge Stückpreis
  • 10+ $0.14734
  • 50+ $0.13566
  • 200+ $0.12593
  • 600+ $0.11620
  • 1500+ $0.10842
  • 3000+ $0.10355

In Stock: 1091

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Menge Minimum 10
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Total

$1.4734

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 2.3A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 156mΩ @ 1.9A,10V
Package / Case SOT-23-3
Packaging Tape & Reel (TR)
Transistor Polarity N Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Querverweise
4582481
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4582481&N=
$
10 0.14734
50 0.13566
200 0.12593
600 0.11620
1500 0.10842
3000 0.10355