Si2309CDS-T1-GE3
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Si2309CDS-T1-GE3 , Vishay Intertech

Hersteller: Vishay Intertech
Mfr.Part #: Si2309CDS-T1-GE3
Paket: SOT23-3
RoHS:
Datenblatt:

PDF For Si2309CDS-T1-GE3

ECAD:
Beschreibung:
MOSFET P Trench 60V 1.6A 3V @ 250uA 345 mΩ @ 1.25A,10V SOT-23(SOT-23-3) RoHS
Tips: the prices and stock are available, please place order directly.
  • Menge Stückpreis
  • 1+ $0.11169
  • 10+ $0.10139
  • 30+ $0.09453
  • 100+ $0.08424
  • 500+ $0.07943
  • 1000+ $0.07600

In Stock: 134

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$0.11169

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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay Intertech
Continuous Drain Current (Id) @ 25°C 1.6A
Power Dissipation-Max (Ta=25°C) 1W
Rds On - Drain-Source Resistance 345mΩ @ 1.25A,10V
Package / Case SOT23-3
Packaging Tape & Reel (TR)
Transistor Polarity P Channel
Vgs - Gate-Source Voltage 3V @ 250uA
Vds - Drain-Source Breakdown Voltage 60V
Querverweise
4581794
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=4581794&N=
$
1 0.11169
10 0.10139
30 0.09453
100 0.08424
500 0.07943
1000 0.07600