IHFR320-GE3
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IHFR320-GE3 , Vishay / Siliconix

Hersteller: Vishay / Siliconix
Mfr.Part #: SIHFR320-GE3
Paket: TO-252-3
RoHS:
Datenblatt:

PDF For SIHFR320-GE3

ECAD:
Beschreibung:
MOSFET 400V Vds 20V Vgs DPAK (TO-252)
Angebotsanfrage In Stock: 468558
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 1.7 S
Rds On - Drain-Source Resistance 1.8 Ohms
Rise Time 14 ns
Fall Time 13 ns
Mounting Style SMD/SMT
Pd - Power Dissipation 42 W
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case TO-252-3
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Series SIH
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V
Vgs Th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 20 nC
Technology Si
Id - Continuous Drain Current 3.1 A
Vds - Drain-Source Breakdown Voltage 400 V
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 10 ns
Factory Pack Quantity 1
Subcategory MOSFETs
Querverweise
712075
1148
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