IRA14BDP-T1-GE3
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SIRA14BDP-T1-GE3 , Vishay / Siliconix

Hersteller: Vishay / Siliconix
Mfr.Part #: SIRA14BDP-T1-GE3
Paket: PowerPAK SO-8
RoHS:
Datenblatt:

PDF For SIRA14BDP-T1-GE3

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Beschreibung:
MOSFET 30V Vds; 20/-16V Vgs PowerPAK SO-8
Angebotsanfrage In Stock: 174873
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Technische Produktspezifikationen
Product Attribute Attribute Value
Manufacturer Vishay
Product Category MOSFET
RoHS
Forward Transconductance - Min 65 S
Rds On - Drain-Source Resistance 5.38 mOhms
Rise Time 5 ns
Fall Time 5 ns
Mounting Style SMD/SMT
Product Type MOSFET
Number Of Channels 1 Channel
Package / Case PowerPAK SO-8
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Packaging Cut Tape or Reel
Brand Vishay / Siliconix
Configuration Single
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vgs - Gate-Source Voltage 20 V, - 16 V
Vgs Th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 22 nC
Technology Si
Id - Continuous Drain Current 21 A
Vds - Drain-Source Breakdown Voltage 30 V
Typical Turn-Off Delay Time 16 ns
Typical Turn-On Delay Time 10 ns
Factory Pack Quantity 3000
Subcategory MOSFETs
Querverweise
712690
1148
/category/Semiconductors/Discrete-Semiconductors/Transistors/MOSFET_1148?proid=712690&N=
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