FQI19N20TU
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FQI19N20TU , fairchild semiconductor

Hersteller: fairchild semiconductor
Mfr.Part #: FQI19N20TU
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MOSFET N-CH 200V 19.4A I2PAK
Angebotsanfrage In Stock: 442598
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Technische Produktspezifikationen
Product Attribute Attribute Value
Drain To Source Voltage (Vdss) 200 V
Vgs(Th) (Max) @ Id 5V @ 250µA
Mounting Type Through Hole
Fet Type N-Channel
Vgs (Max) ±30V
Rds On (Max) @ Id, Vgs 150mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Fet Feature -
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 19.4A (Tc)
Querverweise
11935977
415
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