NDD60N550U1-1G
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NDD60N550U1-1G , onsemi

Hersteller: onsemi
Mfr.Part #: NDD60N550U1-1G
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Beschreibung:
MOSFET N-CH 600V 8.2A IPAK
Angebotsanfrage In Stock: 198311
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Technische Produktspezifikationen
Product Attribute Attribute Value
Mounting Type Through Hole
Supplier Device Package I-PAK
Drain To Source Voltage (Vdss) 600 V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V
Power Dissipation (Max) 94W (Tc)
Fet Type N-Channel
Technology MOSFET (Metal Oxide)
Vgs (Max) ±25V
Fet Feature -
Vgs(Th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Operating Temperature -55°C ~ 150°C (TJ)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Querverweise
11952928
415
/category/Semiconductors/Discrete-Semiconductors_415?proid=11952928&N=
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